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RFF60P06

Features: • 25A, 60V• rDS(ON) = 0.030W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 150oC Operating Temperature• Reliability ScreenedSpecifications RFF60P06 UNITS Drain to Source Voltage (Note...

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RFF60P06: Features: • 25A, 60V• rDS(ON) = 0.030W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 150oC Operating Temperatu...

RFF60P06 Data Sheet

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Part Number:
RFF60P06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 25A, 60V
• rDS(ON) = 0.030W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened


Specifications

  RFF60P06 UNITS
Drain to Source Voltage (Note 1) VDSS -60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -60 V
Continuous Drain Current ID 50 A
Pulsed Drain Current (Note 3) IDM 120 A
Gate to Source Voltage VGS ±20 V
Power Dissipation PD 125 W
Derate Above 25oC 1.0 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C



Description

The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. RFF60P06 was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. <BR><BR>These transistors can be operated directly from integrated circuits. Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.

Formerly developmental type TA09835.




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