Features: ➔ Advanced third-generation GaAs HBT process➔ 4x4mm 50Ω internally matched package➔ 28 dBm linear output power➔ 40% power added efficiency➔ 54% AMPS power added efficiency➔ -50 dBc adjacent channel power rejection➔ 3V regulated volta...
RF6100-2: Features: ➔ Advanced third-generation GaAs HBT process➔ 4x4mm 50Ω internally matched package➔ 28 dBm linear output power➔ 40% power added efficiency➔ 54% AMP...
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Frequency (MHz) | 824 to 849 |
Gain (dB) | 29 at 836 |
Vcc (V) | 3.2 to 4.2 |
Package/Size (Dim in mm) | 4x4 Module |