RF4E20N50S

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.24 Ohms
Package / Case : TO-268AA


Features:

• 20A, 500V
• r_DS(ON) = 0.240Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		RF4E20N50S	UNITS
Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20kΩ) (Note 1) Continuous Drain Current TC = 100°C Pulsed Drain Current (Note 3) Gate to Source Voltage Maximum Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Rating (Note 4) Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334	VDS VDGR ID ID IDM VGS PD EAS TJ, TSTG TL Tpkg	500 500 20 12 80 ±20 250 2.0 960 -55 to 150 300 260	V V A A A V W W/°C mJ °C °C °C

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors RF4E20N50S. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs RF4E20N50Sare designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17465.