RF3805

Features:

• 5W Output Power
• High Linearity
• 40% Power-Added Efficiency
• Thermally-Enhanced AlN Packaging
• Broadband Platform Design Approach


Application

• GaAs HBT Pre-Driver for Basestation Amplifiers
• Power Amplifier Stage for Commercial Wireless Infrastructure
• Class AB Operation for GSM/EDGE/ CDMA2000/W-CDMA Transmitter Applications


Description

The RF3805 is specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance dual-stage amplifier achieves high output power over a broad frequency range. The RF3805 amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation. Various evaluation board configurations are available to address a broad range of wireless infrastructure applications:
• GSM/EDGE1800
• CDMA2000
• W-CDMA