Features: • 300MHz to 3GHz• +40dBm Output IP3• 12.5dB Gain at 2.0GHz• +23dBm P1dB• 3.0dB Typical Noise Figure at 2.0GHz• Single 5V Power SupplyApplication• Basestation Applications• Cellular and PCS Systems• WLL, W-CDMA Systems• Final PA ...
RF3315: Features: • 300MHz to 3GHz• +40dBm Output IP3• 12.5dB Gain at 2.0GHz• +23dBm P1dB• 3.0dB Typical Noise Figure at 2.0GHz• Single 5V Power SupplyApplication• ...
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Parameter |
Rating |
Unit |
RF Input Power |
+20 |
dBm |
Device Voltage |
-0.5 to +6.0 |
V |
Device Current |
250 |
mA |
Operating Ambient Temperature |
-40 to +85 |
|
Storage Temperature |
-40 to +150 |
The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply.