Features: • Input/Output Internally Matched @ 50• Single 3V Supply• 29dBm Linear Output Power• 26dB Linear Gain• 32% Linear EfficiencyApplication• 3V CDMA Korean-PCS Handsets • Spread-Spectrum SystemsSpecifications Parameter Rating Unit Sup...
RF3120: Features: • Input/Output Internally Matched @ 50• Single 3V Supply• 29dBm Linear Output Power• 26dB Linear Gain• 32% Linear EfficiencyApplication• 3V CDMA Korean-...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Rating |
Unit |
Supply Voltage(RF off) |
+8.0 |
VDC |
Supply Voltage (POUT29dBm) |
+4.5 |
VDC |
Mode Voltage (VREG) |
+4.2 |
VDC |
Control Voltage (VMODE) |
+3.5 |
VDC |
Input RF Power |
+10 |
dBm |
Operating Ambient Temperature |
-30 to +85 |
|
Storage Temperature |
-30 to +150 |
The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device RF3120 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3120 has a digital bias control voltage for low current in standby mode. The device is self-contained with 50 input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module RF3120 is an ultra-small 6mmx6mm land grid array with backside ground.