RF2861

Features: • 3mmx3mm LNA/Mixer Solution• Adjustable LNA and Mixer Current/IIP3• Meets IMD Tests with Three Gain States/Two Logic Control Pins • Integrated TX LO Buffer Amplifier• Full ESD Protection on all PinsApplication• CDMA/JCDMA Cellular Systems• CDMA4...

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RF2861 Picture
SeekIC No. : 004476327 Detail

RF2861: Features: • 3mmx3mm LNA/Mixer Solution• Adjustable LNA and Mixer Current/IIP3• Meets IMD Tests with Three Gain States/Two Logic Control Pins • Integrated TX LO Buffer Amplifi...

floor Price/Ceiling Price

Part Number:
RF2861
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/13

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Product Details

Description



Features:

• 3mmx3mm LNA/Mixer Solution
• Adjustable LNA and Mixer Current/IIP3
• Meets IMD Tests with Three Gain States/Two Logic Control Pins
• Integrated TX LO Buffer Amplifier
• Full ESD Protection on all Pins



Application

• CDMA/JCDMA Cellular Systems
• CDMA450 Handsets/Data Cards
• AMPS Cellular Systems
• General Purpose LNA and Downconverter
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment



Specifications

Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.5
VDC
Input RF Levels
+6
dBm
Operating Ambient Temperature
-40 to +85
Storage Temperature
-40 to +150



Description

The RF2861 is a receiver front-end for CDMA cellular applications, including JCDMA and CDMA450. RF2861 is designed to amplify and downconvert RF signals, using a three gain state LNA to obtain 17dB of stepped gain control. Features include digital control of LNA gain and power down mode, along with an integrated TX LO buffer amplifier. Another feature of the chip RF2861 is adjustable IIP3 of  the LNA and mixer using off-chip current setting resistors to allow for minimum DC current consumption. Noise figure, IIP3, and other specs are designed to be compatible with the TIA/EIA 98D standard for CDMA cellular communications. The IC is manufactured on an advanced Silicon Germanium Bi-CMOS process and is in a 3mmx3mm, 16-pin, QFN.




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