Features: 1) Low Qg.2) Low on-resistance.3) Exellent resistance to damage from static electricitySpecifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID 10 A Pulsed IDP∗ 40 A Rev...
RES100N03: Features: 1) Low Qg.2) Low on-resistance.3) Exellent resistance to damage from static electricitySpecifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS 30 V Gate-Sour...
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Parameter | Symbol | Limits | Unit | |
Drain-Source Voltage | VDSS | 30 | V | |
Gate-Source Voltage | VGSS | ±20 | V | |
Drain Current | Continuous | ID | 10 | A |
Pulsed | IDP∗ | 40 | A | |
Reverse Drain Current |
Continuous | IDR | 10 | A |
Pulsed | IDRP∗ | 40 | A | |
Source Current (Body Diode) |
Continuous | Is | 1.3 | A |
Pulsed | Isp∗ | 5.2 | A | |
Total Power Dissipation(Tc=25°C) | PD | 2 | W | |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | −55∼+150 | °C |