Features: ·Low Qg.·Low on-resistance.·Exellent resistance to damage from static electricity.ApplicationSwitchingSpecifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID ...
RDS035L03: Features: ·Low Qg.·Low on-resistance.·Exellent resistance to damage from static electricity.ApplicationSwitchingSpecifications Parameter Symbol Limits Unit Drain-Source Voltage ...
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Parameter |
Symbol |
Limits |
Unit | |
Drain-Source Voltage |
VDSS |
30 |
V | |
Gate-Source Voltage |
VGSS |
±20 |
V | |
Drain Current |
Continuous |
ID |
3.5 |
A |
Pulsed |
IDP∗ |
14 |
A | |
Reverse Drain Current |
Continuous |
IDR |
3.5 |
A |
Pulsed |
IDRP∗ |
14 |
A | |
Source Current (Body Diode) |
Continuous |
Is |
1.3 |
A |
Pulsed |
Isp∗ |
5.2 |
A | |
Total Power Dissipation(Tc=25°C) |
PD |
2 |
W | |
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
−55~150 |
°C |