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RDD050N20

Features: 1) Low on-resistance.2) Low input capacitance.3) Exellent resistance to damage from static electricity.Specifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID ±5 A Pulsed IDPW...

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RDD050N20: Features: 1) Low on-resistance.2) Low input capacitance.3) Exellent resistance to damage from static electricity.Specifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS 20...

RDD050N20 Data Sheet

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Part Number:
RDD050N20
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.


Specifications

Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS ±30 V
Drain Current Continuous ID ±5 A
Pulsed IDP∗ ±20 A
Source Current
(Body Diode)		 Continuous Is 5 A
Pulsed Isp∗ 20 A
Avalanche Current IAS 5 A
Avalanche Energy EAS 75 mJ
Total Power Dissipation(Tc=25°C) PD 20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55∼+150 °C

 




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