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RD30HUF1

Features: •High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz•High Efficiency: 55%typ.ApplicationFor output stage of high power amplifiers in UHF band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage 30 V ...

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RD30HUF1: Features: •High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz•High Efficiency: 55%typ.ApplicationFor output stage of high power amplifiers in UHF band mobile radio sets.Specifi...

RD30HUF1 Data Sheet

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Part Number:
RD30HUF1
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

•High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
•High Efficiency: 55%typ.




Application

For output stage of high power amplifiers in UHF band mobile radio sets.




Specifications

SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage 30 V
VGSS Gate to source voltage +/-20 V
Pch Channel dissipation Tc=25 75 W
Pin Input power Zg=Zl=50 7.5 W
Tj Junction temperature 175
Tstg Storage temperature -40 to +175
R th j-c Thermal resistance junction to case 2.0 /W

Note 1: Above parameters are guaranteed independently.




Description

RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.




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