RCA1000

The RCA1000 is designed as one kind of 8-ampere silicon NPN darlington power transistor device that can be used in general-purpose switching and amplifier applications. Features of the RCA1000 are:(1)high DC current gain: hFE = 1000 min. at Ic = 3A;(2)monolithic construction. And this construction of units provides good forward-bias second-breakdown capability.

The absolute maximum ratings of the RCA1000 can be summarized as:(1)collector-to-base voltage: 60 V;(2)collector-to-emitter voltage: 60 V;(3)emitter-to-base voltage: 5 V;(4)collector current: 8 or 15 A;(5)base current (continuous): 0.1 A;(6)transistor dissipation: 90 W;(7)storage and operating (junction) temperature: -55 to +200;(8)lead temperature (during soldering): 235. If you want to know more information about RCA1000, please download the datasheet in www.seekic.com or www.chinaicmart.com .