SpecificationsDescriptionThe RB861Y is designed as one kind of schottky barrier diode device that can be used in high frequency detection applications. And features of this device are:(1)Ultra small mold type. (EMD4);(2)Low Ct and high detection efficiency. The construction is silicon epitaxial pl...
RB861Y: SpecificationsDescriptionThe RB861Y is designed as one kind of schottky barrier diode device that can be used in high frequency detection applications. And features of this device are:(1)Ultra small...
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The RB861Y is designed as one kind of schottky barrier diode device that can be used in high frequency detection applications. And features of this device are:(1)Ultra small mold type. (EMD4);(2)Low Ct and high detection efficiency. The construction is silicon epitaxial planar.
The absolute maximum ratings of the RB861Y can be summarized as:(1)reverse voltage: 5.0 V;(2)forward current: 10 mA;(3)Junction temperature: 125 ;(4)storage temperature: -40 to +125 . The electrical characteristics of the RB861Y can be summarized as:(1)Forward voltage: 0.29 V;(2)reverse currnt: 30 uA;(3)Capacitance between terminals: 0.85 to 1.10 pF. If you want to know more information about RB861Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .