RB530XN

The RB530XN is designed as one kind of schottky barrier diode device that can be used in low current rectification applications. And features of this device are:(1)small mold type. (UMD6), (EMD3);(2)high reliability;(3)low IR. The construction is silicon epitaxial planar.

The absolute maximum ratings of the RB530XN can be summarized as:(1)reverse voltage: 30 V;(2)forward current: 100 mA;(3)Junction temperature: 125 ;(4)storage temperature: -40 to +125 ;(5)forward current surge peak: 100 mA.

The electrical characteristics of the RB530XN can be summarized as:(1)Forward voltage: 0.450 V;(2)reverse currnt: 1.0 uA;(3)Capacitance between terminals: 2.0 pF. And this device is designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). If you want to know more information about the RB530XN, please download the datasheet in www.seekic.com or www.chinaicmart.com .