R531

The R531 is designed as one kind of N-channel enhancement mode vertical DMOS power FETs. This entransistors utilize a vertical DMOS structure and supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.

The R531 has seven features. (1)Freedom from secondary breakdown. (2)Low power drive requirement. (3)Ease of paralleling. (4)Low Ciss and fast stability. (5)Integral source-drain diode. (6)High input impedance and high gain. Those are all the main features.

Some absolute maximum ratings of R531 have been concluded into several points as follow. (1)Its drain to source voltage would be BVdss. (2)Its drain-to-gate
voltage would be BVdgs. (3)Its gate-to-source voltage would be +/-20V. (4)Its operating and storage temperature range would be from -55°C to 150°C. (5)Its soldering temperature range would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of R531 are concluded as follow. (1)Its drain to source breakdown voltage would be min 60V. (2)Its gate threshold voltage would be min 2.0V and max 4.0V. (3)Its gate body leakage current would be max 500nA. (4)Its zero gate voltage drain current would be 250uA. (5)Its ON-state drain current would be min 12A. (6)Its static drain-to-source ON-state resistance would be max 0.18ohms. (7)Its forward transconductance would be min 4.0ohms. (8)Its input capacitance would be 800pF. (9)Its common source output capacitance would be max 500pF. (10)Its turn-ON delay time would be max 30ns. (10)Its fall time would be max 45ns. (11)Its rise time would be max 30ns. (12)Its turn-OFF delay time would be max 40ns. (13)Its diode forward voltage drop would be max 2.5V at Isd=1A and would be max 2.3V at Isd=8A. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!