Features: • Single 2.7-3.6V power supply• Small stand-by current:4A (3.0V, typ.)• Data retention supply voltage =2.0V• No clocks, No refresh• All inputs and outputs are TTL compatible.• Easy memory expansion by CS1#, CS2, LB# and UB#• Common Data I/O•...
R1WV3216R: Features: • Single 2.7-3.6V power supply• Small stand-by current:4A (3.0V, typ.)• Data retention supply voltage =2.0V• No clocks, No refresh• All inputs and outputs are...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit | |
Power supply voltage relative to Vss |
Vcc |
-0.5 to +4.6 |
V | |
Terminal voltage on any pin relation toVss |
VT |
-0.5*1 to Vcc+0.3*2 |
V | |
Power dissipation |
PT |
0.7 |
W | |
Operation temperature |
Topr |
R ver. |
0 to +70 |
ºC |
W ver. |
-20 to +85 |
ºC | ||
I ver. |
-40 to +85 |
ºC | ||
Storage temperature |
Tstg |
-65 to +150 |
ºC | |
Storage temperature range under bias |
Tbias |
R ver. |
0 to +70 |
ºC |
W ver. |
-20 to +85 |
ºC | ||
I ver. |
-40 to +85 |
ºC |
Note 1: -2.0V in case of AC (Pulse width 30ns)
2:Maximum voltage is +4.6V
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit superSRAMs are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[TSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.