R1RW0408D

Features: • Single supply: 3.3 V ± 0.3 V• Access time: 12 ns (max)• Completely static memory No clock or timing strobe required• Equal access and cycle times• Directly TTL compatible All inputs and outputs• Operating current: 100 mA (max)• ...

product image

R1RW0408D Picture
SeekIC No. : 004468965 Detail

R1RW0408D: Features: • Single supply: 3.3 V ± 0.3 V• Access time: 12 ns (max)• Completely static memory No clock or timing strobe required• Equal access and cycle times• D...

floor Price/Ceiling Price

Part Number:
R1RW0408D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/20

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Single supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current: 100 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current : 5 mA (max)
: 0.8 mA (max) (L-version)
• Data retention current: 0.4 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out



Pinout

  Connection Diagram


Specifications

Parameter Symbol Value Unit
Supply voltage relative to VSS Vcc -0.5 to +4.6 V
Voltage on any pin relative to VSS VT −0.5*1 to VCC + 0.5*2 V
Power dissipation PT 1.0 W
Operation temperature Topr 0 to +70 °C
Storage temperature Tstg −55 to +125 °C
Storage temperature range under bias Tbias −10 to +85 °C
Notes: 1. VT (min) = −2.0 V for pulse width (under shoot) 6 ns.
           2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.



Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Discrete Semiconductor Products
Hardware, Fasteners, Accessories
Memory Cards, Modules
Transformers
Computers, Office - Components, Accessories
View more