Features: • Single supply: 3.3 V ± 0.3 V• Access time: 12 ns (max)• Completely static memory No clock or timing strobe required• Equal access and cycle times• Directly TTL compatible All inputs and outputs• Operating current: 100 mA (max)• ...
R1RW0408D: Features: • Single supply: 3.3 V ± 0.3 V• Access time: 12 ns (max)• Completely static memory No clock or timing strobe required• Equal access and cycle times• D...
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Parameter | Symbol | Value | Unit |
Supply voltage relative to VSS | Vcc | -0.5 to +4.6 | V |
Voltage on any pin relative to VSS | VT | −0.5*1 to VCC + 0.5*2 | V |
Power dissipation | PT | 1.0 | W |
Operation temperature | Topr | 0 to +70 | °C |
Storage temperature | Tstg | −55 to +125 | °C |
Storage temperature range under bias | Tbias | −10 to +85 | °C |
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.