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R1LV0408C-I

Features: • Single 3 V supply: 2.7 V to 3.6 V• Access time: 55/70 ns (max)• Power dissipation: Active: 6 mW/MHz (typ) Standby: 1.5 µW (typ)• Completely static memory. No clock or timing strobe required• Equal access and cycle times•...

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SeekIC No. : 004468952 Detail

R1LV0408C-I: Features: • Single 3 V supply: 2.7 V to 3.6 V• Access time: 55/70 ns (max)• Power dissipation: Active: 6 mW/MHz (typ) Standby: 1.5 µW (typ)• Completely ...

R1LV0408C-I Data Sheet

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Part Number:
R1LV0408C-I
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
 Active: 6 mW/MHz (typ)
 Standby: 1.5 µW (typ)
• Completely static memory.
 No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
 Three state output
• Directly TTL compatible.
 All inputs and outputs
• Battery backup operation.
• Operating temperature: −40 to +85°C


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Power supply voltage relative to Vss Vcc -0.5 to +4.6 V
Terminal voltage on any pin relation toVss PT −0.5*1 to VCC + 0.5*2 V
Power dissipation VT 0.7 W
Operation temperature Topr -40 to +85 °C
Storage temperature Tstg -65 to +150 °C
Storage temperature range under bias Tbias -40 to +85 °C
Notes: 1. VT min: −3.0 V for pulse half-width 30 ns.
           2. Maximum voltage is +4.6 V.


Description

The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin STSOP.




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