Features: • Single 3 V supply: 2.7 V to 3.6 V• Access time: 55/70 ns (max)• Power dissipation: Active: 6 mW/MHz (typ) Standby: 1.5 µW (typ)• Completely static memory. No clock or timing strobe required• Equal access and cycle times•...
R1LV0408C-I: Features: • Single 3 V supply: 2.7 V to 3.6 V• Access time: 55/70 ns (max)• Power dissipation: Active: 6 mW/MHz (typ) Standby: 1.5 µW (typ)• Completely ...
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Parameter | Symbol | Value | Unit |
Power supply voltage relative to Vss | Vcc | -0.5 to +4.6 | V |
Terminal voltage on any pin relation toVss | PT | −0.5*1 to VCC + 0.5*2 | V |
Power dissipation | VT | 0.7 | W |
Operation temperature | Topr | -40 to +85 | °C |
Storage temperature | Tstg | -65 to +150 | °C |
Storage temperature range under bias | Tbias | -40 to +85 | °C |
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin STSOP.