DescriptionThe QVB11333 is slotted optical switch. It is designed to allow the user maximum flexibility in applications. The device consists of an infrared emitting diode facing an NPN phototransistor across a .125 gap. Features of the QVB11333 are:(1)ambient light and dust protection;(2)lead sp...
QVB11333: DescriptionThe QVB11333 is slotted optical switch. It is designed to allow the user maximum flexibility in applications. The device consists of an infrared emitting diode facing an NPN phototransist...
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The QVB11333 is slotted optical switch. It is designed to allow the user maximum flexibility in applications. The device consists of an infrared emitting diode facing an NPN phototransistor across a .125" gap.
Features of the QVB11333 are:(1)ambient light and dust protection;(2)lead spacing available at .220:, .300", or .320";(3).050" and .010" aperatures available.
The absolute maximum ratings of the QVB11333 can be summarized as:(1)operating temperature:-40 to +85;(2)storage temperature:-40 to +85;(3)soldering temperature(iron):240 for 5sec ;(4)soldering temperature(flow):260 for 10sec;(5)continuous forward current:50mA;(6)reverse voltage:5.0V;(7)power dissipation:100mW;(8)collector-emitter voltage:30V;(9)emitter-collector voltage:5.0V;(10)collector current:40mA.
The electrical characteristics of the QVB11333 are:(1)forward voltage:1.70V;(2)reverse leakage current:100uA;(3)emitter-collector breakdown:5V;(4)collector-emitter breakdown:30V;(5)collector-emitter leakage:100nA;(6)saturation voltage:0.40V.
If you want to know more information such as the electrical characteristics about the QVB11333, please download the datasheet in www.seekic.com or www.chinaicmart.com .