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QSD722

Photodetector Transistors 0.6mA PHOTO TRANS

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SeekIC No. : 0082458 Detail

QSD722: Photodetector Transistors 0.6mA PHOTO TRANS

QSD722 Data Sheet

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Part Number:
QSD722
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Maximum Power Dissipation : 100 mW Maximum Dark Current : 100 nA
Package / Case : TO-18    

Description

Maximum Power Dissipation : 100 mW
Maximum Dark Current : 100 nA
Package / Case : TO-18


Features:

• NPN Silicon Phototransistor
• Package Type: Plastic TO-18
• Matched Emitter: QED523
• Narrow Reception Angle, 40°
• Daylight Filter
• Package material and color: black epoxy
• High Sensitivity


Specifications

Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-40 to +100
°C
Storage Temperature
TSTG
-40 to +100
°C
Soldering Temperature (Iron)(2,3,4)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(2,3)
TSOL-F
260for 10sec
°C
Collector-Emitter Voltage
VCE
30
V
Emitter-Collector Voltage
VEC
5
V
Power Dissipation(1)
PD
100
mW



Description

The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package.


Parameters:

Technical/Catalog InformationQSD722
VendorFairchild Optoelectronics Group
CategorySensors, Transducers
Voltage - Collector Emitter (BVceo) (Max)30V
Current - Collector (Ic) (Max)-
Current - Dark (Id) (Max)100nA
Power - Max100mW
OrientationTop View
Mounting TypeThrough Hole
Package / CaseTO-18
Wavelength880nm
Viewing Angle40°
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QSD722
QSD722



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