Photodetector Transistors Phototransistor Si Infrared
QSB363YR: Photodetector Transistors Phototransistor Si Infrared
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Maximum Power Dissipation : | 75 mW | Maximum Dark Current : | 100 nA |
Package / Case : | T-3/4 |
Technical/Catalog Information | QSB363YR |
Vendor | Fairchild Optoelectronics Group |
Category | Optoelectronics |
Voltage - Forward (Vf) Typ | - |
Current - DC Forward (If) | 100mA |
Wavelength | 940nm |
Viewing Angle | 24° |
Radiant Intensity (Ie) Min @ If | - |
Mounting Type | Surface Mount |
Package / Case | T 3/4 |
Orientation | Top View |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QSB363YR QSB363YR |