QS7201

The QS7201 is designed as high speed CMOS 512 x 9, 1K x 9 FIFO buffer memories. These FIFOs use a dual-port RAM based architecture and have independent read and write pointers. This allows high speed with zero fall through time.

QS7201 has many features. The first one is 12-ns flag and data access times. The second one is fully asynchronous read and write. The third one is zero fall-through time. The fourth one is expandable in depth with no speed loss. The fifth one is TTL compatible input and output levels. The sixth one is low power with industry standard pinouts. The seventh one is retransmit capability. The eighth one is dual port RAM-based cell technology. The last one is it would be available in PDIP, SOIC, SOJ, PLCC and QSOP. That are all the main features.

Some absolute maximum ratings OF QS7201 have been concluded into several points as follow. The first one is about its supply voltage to ground which would be from -0.5V to 7.0V. The second one is about its DC output voltage which would be -0.5V to Vcc+0.5V. The third one is about its DC input voltage which would be from -0.5V to Vcc+0.5V. The fourth one is about its AC input voltage (for a pulse width <= 20ns) which would be -3.0V. The fifth one is about its DC input diode current with Vin<0 which would be -20mA. The sixth one is about its DC output current max sink current/pin which would be 70mA. The seventh one is about its storage temperature range which would be from -65°C to +150°C. It should be noted that stresses greater than those listed under absolute maximum ratings may cause permanent damage to QSI devices that result in functional or reliability type failures. And so on. If you have any question or suggestion or want to know more information please contact us.