DescriptionThe M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM com- ponents have separate power supplies and grounds and are distinguished by three chip enable inpu...
QRMM0010: DescriptionThe M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM c...
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The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM com- ponents have separate power supplies and grounds and are distinguished by three chip enable inputs.
The Flash memory component M36DR864CB/DB is the ST's M58CR064C/D that features a Dual Bank, Burst architecture.It is manufactured with the ST advanced CMOS 0.15 micron process which has been specially developed for Flash memory products. The memory M36DR864CB/DB features a fast access time, low power consumption in all oper-ations and an endurance of 100,000 Program/Erase cycles per block.
The SRAM component M36DR864CB/DB features a fully static operation and a low power standby. It is manufactured by CYPRESS with a 0.16 micron process technology.