QRB1134

Series: -
Sensing Method: Reflective
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Packaging: Bulk
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
Mounting Type: Chassis Mount
Package / Case: Module, Pre-Wired
Sensing Distance: 0.150" (3.81mm)
Manufacturer: Fairchild Optoelectronics Group
Response Time: 8µs, 8µs


Features:

• Phototransistor output
• High Sensitivity
• Low cost plastic housing
• #26 AWG, 24 inch PVC wire termination
• Infrared transparent plastic covers for dust protection




Specifications

Parameter	Symbol	Rating	Units
Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3)	TOPR TSTG TSOL-I TSOL-F	-40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec	°C °C °C °C
EMITTER Continuous Forward Current Reverse Voltage Power Dissipation(1)	IF VR PD	50 5 100	mA V mW
SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1)	VCEO VECO IC PD	30 50 20 100	V V mA mW

NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing
QRB1134	Full Production	RoHS Compliant	$1.23	Arrowhead	4	BULK	TBD

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Description

The QRB1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.

Parameters:

Technical/Catalog Information	QRB1134
Vendor	Fairchild Optoelectronics Group
Category	Sensors, Transducers
Sensing Distance	*
Sensing Method	Reflective
Output Type	Phototransistor
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	20mA
Current - DC Forward (If)	50mA
Response Time	8s , 8s <!--8us-->
Operating Temperature	-40°C ~ 85°C
Features	Dust Cover
Mounting Type	Chassis Mount, Wire Lead
Package / Case	Pre-Leaded
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	QRB1134 QRB1134