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QM50E3Y-H

Specifications Symbol Parameter Conditions Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Colle...

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QM50E3Y-H: Specifications Symbol Parameter Conditions Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector...

QM50E3Y-H Data Sheet

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Part Number:
QM50E3Y-H
Supply Ability:
5000

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Specifications

Symbol Parameter Conditions Ratings Unit
VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V
VCEX Collector-emitter voltage VEB=2V 600 V
VCBO Collector-base voltage Emitter open 600 V
VEBO Emitter-base voltage Collector open 7 V
IC Collector current DC 50 A
IC Collector reverse current DC (forward diode current) 50 A
PC Collector dissipation TC=25 310 W
IB Base current DC 3 A
ICSM Surge collector reverse current
(forward diode current)		 Peak value of one cycle of 60Hz (half wave) 500 A

Symbol Parameter Conditions Ratings Unit
VRRM Repetitive peak reverse voltage   600 V
VRSM Non-repetitive peak reverse voltage   720 V
VR (DC) DC reverse voltage   480 V
IDC DC current DC circuit, resistive, inductive load 50 A
IFSM Surge (non-repetitive) forward current Peak value of one cycle of 60Hz (half wave) 1000 A
I2t I2t for fusing Value for one cycle of surge current 4.2 *103 A2s

Symbol Parameter Conditions Ratings Unit
Tj Junction temperature   40~150
Tstg Storage temperature   40~125
Viso Isolation voltage Charged part to case, AC for 1 minute 2500 V
  Mounting torque Main terminal screw M5 1.47~1.96 N`m
15~20 kg`cm
Mounting screw M6 1.96~2.94 N`m
20~30 kg`cm
  Weight Typical value 210 g



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