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QLNA4S.01R

Features: ` Low Noise 2.5 dB N.F. ` High Gain 22 dB Gain (min) ` Frequency Range : 40-46 GHz ` 50 Zin / Zout ` >10 dB Input / Output Return Loss ` > 8 dBm Output power at 1dB gain compression ` Chip size : 1.5 mm X 0.7 mm ` Substrate Thickness : 75 m `Bond Pad dimensions 100 m x 100 mSpeci...

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QLNA4S.01R: Features: ` Low Noise 2.5 dB N.F. ` High Gain 22 dB Gain (min) ` Frequency Range : 40-46 GHz ` 50 Zin / Zout ` >10 dB Input / Output Return Loss ` > 8 dBm Output power at 1dB gain compressio...

QLNA4S.01R Data Sheet

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Part Number:
QLNA4S.01R
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

  ` Low Noise 2.5 dB N.F.
  ` High Gain 22 dB Gain (min)
  ` Frequency Range : 40-46 GHz
  ` 50 Zin / Zout
  ` >10 dB Input / Output Return Loss
  ` > 8 dBm Output power at 1dB gain compression
  ` Chip size : 1.5 mm X 0.7 mm
  ` Substrate Thickness : 75 m
  ` Bond Pad dimensions 100 m x 100 m


Specifications

Symbol Parameters/Conditions Min Max Units
Vd 1 2 3 Drain Supply Voltage   5 Volts
Vg 1 2 3 Gate Supply Voltage -0.6 0.0 Volts
Id total Total drain current   90 mA
Ig total Total gate current   0.1 mA
Pin RF input power   30 dBm
T ch Operating channel temperature   150
T max Max assembly temperature   300*
T stg Max storage temperature -65 165
T base Maximum base plate temperature   140
* 30 minute maximum


Description

The Rockwell QLNA4S.01R is a PHEMT low noise amplifier that operates from 40 to 46 GHz. This 4 stage amplifier has 24 dB nominal gain with 3.0 dB nominal noise figure and 1 dB gain compression of 8 dBm output power minimum. This MMIC is unconditionally stable.




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