QJP0910001

The QJP0910001 is designed as powerex MOSFET modules are designed for use in switching applications. Each module QJP0910001 consists of sixteen MOSFETs, and four diodes in an asymmetrical half bridge configuration. All components are potted in a sealed chamber and are electrically isolated from the geat sinking base plate, offering simplified system assembly and thermal management. QJP0910001's typical applications include switching power supplies, switching amplifiers and motion/servo control.

QJP0910001 has many features. The first one is it would have low drive power. The second one is it would have isolated baseplate for easy heat sinking. The third one is it would have high capacity diodes (D3 & D4). The fourth one is massively paralleled MOSFETs. The fifth one is it would have low rDS on. The sixth one is it would have free wheel diodes. The seventh one is package can be modified to suit customer specifications. That are all the main features.

Some absolute maximum ratings of QJP0910001 (at Tc=25°C unless otherwise specified) have been concluded into several points as follow. The first one is about its drain to source voltage which would be 900V. The second one is about its gate source voltage which would be +/- 30V. The third one is about its drain current which would be 100A. The fourth one is about its drain current (pulsed) which would be 336A. The fifth one is about its forward current D3, D4 which would be 150A. The sixth one is about its forward surge current D3, D4 which would be 300A. The seventh one is about its isolation voltage which would be 2500V. The eighth one is about its channel temperature rang which would be from -55°C to +150°C. That are all the ratings above. And so on. If you have any question or suggestion or want to know more information about QJP0910001 please contact us for details.