Features: ·Low Drive Power·Low VCE(sat) ·Discrete Super-Fast Recovery (70ns) Free-Wheel Diode·High Frequency Operation (20- 25kHz)·Isolated Base plate for Easy Heat sinking·Fully Hermetic Package·Package Design Capable of Use at High Altitudes·Package can be modified to adhere to customer dimensio...
QIS0660001: Features: ·Low Drive Power·Low VCE(sat) ·Discrete Super-Fast Recovery (70ns) Free-Wheel Diode·High Frequency Operation (20- 25kHz)·Isolated Base plate for Easy Heat sinking·Fully Hermetic Package·Pa...
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Ratings | Symbol | Units | |
Collector Emitter Voltage | VCES | 600 | Volts |
Gate Emitter Voltage | VGES | ±20 | Volts |
Collector Current | IC | 600 | Amperes |
Peak Collector Current | ICM | 1200* | Amperes |
Diode Forward Current | IFM | 600 | Amperes |
Diode Forward Surge Current | IFM | 1200* | Amperes |
Power Dissipation | Pd | 2100 | Watts |
V Isolation | VRMS | 2500 | Volts |
Powerex IGBT Hermetic modules QIS0660001 are designed for use in switching applications. Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All components QIS0660001 are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management.