Features: · Low Drive Power·Low VCE(sat)· Discrete Super-Fast Recovery (70ns) Free-Wheel Diode·Isolated Base plate for Easy Heat sinking· Fully Hermetic Package· Package Design Capable of Use at High Altitudes· Package can be modified to adhere to customer dimensions.·D1 sized to match RM400HAAppl...
QIQ0660001: Features: · Low Drive Power·Low VCE(sat)· Discrete Super-Fast Recovery (70ns) Free-Wheel Diode·Isolated Base plate for Easy Heat sinking· Fully Hermetic Package· Package Design Capable of Use at Hig...
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Features: · Low Drive Requirement· Low VCE(sat)· Super Fast Diode· (3) H Series 150A 600V Chips pe...
Features: · Low Drive Requirement· Low VCE(sat)· Super Fast Diode· (3) F Series 150A 600V Chips pe...
Ratings | Symbol | Units | |
Collector Emitter Voltage | VCES | 600 | Volts |
Gate Emitter Voltage | VGES | ±20 | Volts |
Collector Current | IC | 600 | Amperes |
Peak Collector Current | ICM | 1200* | Amperes |
Diode Forward Current(D2) | IFM | 600 | Amperes |
Diode Forward Surge Current(D1) | IFM | 400 | Amperes |
V Isolation | VRMS | 2500 | Volts |
Powerex IGBT Hermetic modules QIQ0660001 are designed for use in switching applications. Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All components QIQ0660001 are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management.