QD7-5T

The QD7-5T is designed as photodiodes which offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 430 to 900nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bias of up to 12V where lower capacitance is needed.

Some absolute maximum ratings of QD7-5T have been conlcuded into several points as follow. The first one is about its DC reverse voltage which would be 30V. The second one is about its storage temperature range which would be from -45°C to +100°C. The third one is about its operating temperature range which would be from -25°C to +75°C. That are all the main ratings.

Also some electrical specifications of QD7-5T (characteristics measured at 22°C ambient, and a reverse bias of 12 volts, unless otherwise stated and shunt resistance measured at +/- 10mV and for risetime on quadrants, linear and matrix arrays use value for single element diode having equivalent active area) have been concluded into several points as follow. The first one is about its active area which would be 7mm2 and 2.99mm dia. and sep. 0.2mm. The second one is about its dark current which would be max 6uA and typ 2uA. The third one is about its NEP WHz-1/2 which would be typ 2.3 x 10^-14. The fourth one is about its capacitance which would be 50pF at Vr=0V and would be 15pF at Vr=12V. The fifth one is about its shunt resistance which would be min 80M and typ 1200M. The sixth one is about its crosstalk which would be min 5% and typ 1%. The seventh one is about its package which would be 14. It should be noted that values given are per element unless otherwise stated. And so on. If you have any question or suggestion or want to know more information please contact us.