Q67042-S4403

DescriptionThe Q67042-S4403 is designed as one kind of cool MOS power transistors.Q67042-S4403 has eight features. (1)New revolutionary high voltage techology. (2)Worldwide best Rds(on) in TO 220. (3)Ultra low gate charge. (4)Periodic avalanche rated. (5)Extreme dv/dt rated. (6)High peak current c...

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SeekIC No. : 004467834 Detail

Q67042-S4403: DescriptionThe Q67042-S4403 is designed as one kind of cool MOS power transistors.Q67042-S4403 has eight features. (1)New revolutionary high voltage techology. (2)Worldwide best Rds(on) in TO 220. (...

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Part Number:
Q67042-S4403
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Description



Description

The Q67042-S4403 is designed as one kind of cool MOS power transistors.

Q67042-S4403 has eight features. (1)New revolutionary high voltage techology. (2)Worldwide best Rds(on) in TO 220. (3)Ultra low gate charge. (4)Periodic avalanche rated. (5)Extreme dv/dt rated. (6)High peak current capability. (7)Improved transconductance. (8)150°C operating temperature. Those are all the main features.

Some absolute maximum ratings of Q67042-S4403 have been concluded into several points as follow. (1)Its continuous drain current would be 11A at Tc=25°C and would be 7A at Tc=100°C. (2)Its pulsed drain current, tp limited by Tjmax would be 33A. (3)Its avalanche energy single pulse would be 340mJ at Id=5.5A and Vdd=50V. (4)Its avalanche energy, repetitive tAR limited by Tjmax would be 0.6mJ at Id=11A and Vdd=50V. (5)Its avalanche current, repetitive tAR limited by Tjmax would be 11A. (6)Its reverse diode dv/dt would be 6V/ns. (7)Its gate source voltage static would be +/-20V. (8)Its gate source voltage dynamic would be +/-30V. (9)Its power dissipation would be 125W. (10)Its operating and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of Q67042-S4403 are concluded as follow. (1)Its drain to source breakdown voltage would be min 600V. (2)Its drain to source avalanche breakdown voltage would be typ 700V. (3)Its gate threshold voltage would be min 2.1V and typ 3V and max 3.9V. (4)Its zero gate voltage drain current would be max 25uA at Tj=25°C and would be max 250uA at Tj=150°C. (5)Its gate to source leakage current would be max 100nA. (6)Its ate input resistance would be typ 0.86ohms. (7)Its transconductance would be typ 8.3MS. (8)Its input capacitance would be typ 1460pF. (9)Its output capacitance would be typ 610pF. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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