Q67040-S4640

The features of the Q67040-S4640 are: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)ultra low effective capacitances; (6)improved transconductance.

The following is about the absolute maximum ratings of Q67040-S4640: (1)continuous drain current: 24.3A at TC=25 and 15.4A at TC=100; (2)pulsed drain current: 72.9A; (3)avalanche energy, single pulse: 780mJ; (4)avalanche energy, repetitive: 1.5mJ; (5)drain source voltage slope: 50V/ns; (6)gate source voltage: ±20V static and ±30V AC; (7)power dissipation: 240W; (8)operating and storage temperature: -55 to 150.

The electrical characteristics of the Q67040-S4640 are: (1)drain-source breakdown voltage: 600V; (2)avalanche breakdown voltage: 700V at VGS=0V, ID=24.3A; (3)gate threshold voltage: 2.1V min and 3.9V max at VDS=VGS, ID=1.2mA; (4)zero gate voltage drain current: 0.1A typical and 1A max at VDS=600V, VGS=0V,Tj=25 or 100 A max at VDS=600V, VGS=0V,Tj=150; (5)gate-source leakage current: 100nA max at VGS=20V, VDS=0V; (6)drain-source on-state resistance: 0.14 typical and 0.16 max at VGS=10V, VGS=15.4V,Tj=25.