DescriptionThe Q67040-S4493 is designed as one kind of fast switching EmCon diode.Q67040-S4493 has six features. (1)1200V EmCon technology. (2)Fast recovery. (3)Soft switching. (4)Low reverse recovery charge. (5)Low forward voltage. (6)Easy paralleling. Those are all the main features.Some absolut...
Q67040-S4493: DescriptionThe Q67040-S4493 is designed as one kind of fast switching EmCon diode.Q67040-S4493 has six features. (1)1200V EmCon technology. (2)Fast recovery. (3)Soft switching. (4)Low reverse recove...
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Specifications Parameter Symbol Values Unit Continuous drain current TC = 25 °CTC = 100...
The Q67040-S4493 is designed as one kind of fast switching EmCon diode.
Q67040-S4493 has six features. (1)1200V EmCon technology. (2)Fast recovery. (3)Soft switching. (4)Low reverse recovery charge. (5)Low forward voltage. (6)Easy paralleling. Those are all the main features.
Some absolute maximum ratings of Q67040-S4493 have been concluded into several points as follow. (1)Its repetitive peak reverse voltage would be 1200V. (2)Its continuous forward current would be 31A at Tc=25°C and would be 19.8A at Tc=90°C. (3)Its surge non-repetitive forward current would be 78A at Tc=25°C and tp=10ms sine halfwave. (4)Its maximum repetitive forward current would be 47A at Tc=25°C, tp limited by Tjmax and D=0.5. (5)Its power dissipation would be 113W at Tc=25°C. (6)Its operating and storage temperature range would be from -55°C to 150°C. (7)Its soldering temperature would be 260°C at 1.6mm (0.063 inch) from case for 10 seconds. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of Q67040-S4493 are concluded as follow. (1)Its reverse leakage current would be max 100uA at Vr=1200V and Tj=25°C and it would be max 1400uA at Vr=1200V and Tj=150°C. (2)Its forward voltage drop would be typ 1.65V and max 2.15V at If=18A and Tj=25°C and it would be typ 1.7V at If=18A and Tj=150°C. (3)Its peak reverse current would be typ 20.2A at Vr=800V, If=18A and Tj=25°C and it would be typ 24.4A at Vr=800V, If=18A and Tj=125°C. (4)Its reverse recovery siftness factor would be typ 5.5 at Vr=800V and If=18A and Tj=25°C and it would be typ 6.6 at Vr=800V, If=18A and Tj=125°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!