Q67040-S4479

The Q67040-S4479 is designed as one kind of fast switching EmCon diodes.

Q67040-S4479 has six features. (1)1200V EmCon technology. (2)Fast recovery. (3)Soft switching. (4)Low reverse recovery charge. (5)Low forward voltage. (6)Easy paralleling. Those are all the main features.

Some absolute maximum ratings of Q67040-S4479 have been concluded into several points as follow. (1)Its repetitive peak reverse voltage. (2)Its continuous forward current would be 23A at Tc=25°C and would be 14.4A at Tc=90°C. (3)Its surge non-repetitive forward current would be 50A at Tc=25°C and tp=10ms sine halfwave. (4)Maximum repetitive forward current would be 36A at Tc=25°C and tp limited by Tjmax, D=0.5. (5)Its power dissipation would be 69W at Tc=25°C and would be 33W at Tc=90°C. (6)Its operating and storage temperature range would be from -55°C to 150°C. (7)Its soldering temperature 1.6mm (0.063 inch) from case for 10s would be 260°C. (8)Its thermal resistance junction to case would be max 1.8K/W. (9)Its thermal resistance junction to ambient leaded would be max 62K/W. (10)Its SMD version, device on PCB would be max 62K/W at mion footprint and would be typ 35K/W at 6cm2 cooling area. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of Q67040-S4479 are concluded as follow. (1)Its reverse leakage current would be max 100uA at Vr=1200V and Tj=25°C and would be max 700uA at Vr=1200V and Tj=150°C. (2)Its forward voltage drop would be typ 1.65V and max 2.15V at If=9A and Tj=25°C and would be typ 1.7V at If=9A and Tj=150°C. (3)Its peak reverse current would be typ 13.3A at Vr=800V and If=9A and Tj=25°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!