Q2200J

The Q2200J is designed as CMOS logic arrays. Its series offer densities ranging from 2230 to 9250 equivalent 2-input NAND gates. The series is optimized to provide a systems approach to high performance, low-power semicustom military and commercial applications.

Q2200J has six features about its series. The first one is it features 1.5-micron silicon-gate CMOS with two-level metalization, offering high performance and up to 90% chip utilization. The second one is its series has six array sizes. The next one is it would have 162 I/O capability. The next one is it would have extensive MSI macros. The next one is it would have high speed with low power. The next one is it would be STTL & CMOS compatible. It offer a wide selection of I/O macros which are compatible with CMOS and TTL systems using a single +5V power supply. That are all the main features.

Some absolute maximum ratings of Q2200J have been concluded into several points as follow. The first one is about its supply voltage which would be from -0.3V to 7.0V. The next one is about its input voltage which would be from -0.3V to Vdd + 0.3V. The next one is about its output voltage which would be from -0.3 to Vdd + 0.3V. The next one is about its storage temperature range which would be from -65°C to +150°C. The next one is about its recommended supply voltage which would be +5 ± 10%V. The next one is about its recommended operating temperature range which would be from -55°C to +125°C.

Also there are some CMOS DC characteristics about Q2200J. The first one is about its input low voltage which would be max 1V. The next one is about its input high voltage which would be min 3.7V. The next one is about its schmitt trigger positive going threshold which would be max 4.2V. The next one is about its schmitt trigger negative going threshold which would be min 0.6V. And so on. For more information please contact us.