Q2100B

The Q2100B is designed as BiCMOS logic arrays which is optimized to provide CMOS densities with bipolar performance for today's sophisticated semicustom applications. It combines 1.5-nicron CMOS features with an advanced 1.5-micron oxide-isolated bipolar process on a single silicon chip.

Q2100B has nine features. The first one is 1.5-micron mixed bipolar / CMOS technology. The next one is equivalent speeds of first-generation ECL- 0.7ns gate delays. The next one is extremely low power as low as 0.2mW/gate. The next one is high density which would be up to 14000 equivalent gates. The next one is low interconnect delay penalty 25pS/fanout. The next one is speed / power programmable I/O macros. The next one is 10K ECL, 100K ECL, CMOS, TTL or mixed COMS / ECL / TTL. The next one is operation from -55°C ambient to +125° case. The next one is high output drive capability which would be 48mA. That are all the main features.

Some absolute maximum ratings of Q2100B have been concluded into several points as follow. The first one is about its ECL supply voltage which would be -8Vdc. The next one is about its ECL input voltage which would be GND to Vee. The next one is about its ECL output source current continuous which would be -50mAdc. The next one is about its TTL supply voltage which would be 7.0V. The next one is about its TTL input voltage which would be 5.5V. The next one is about its operating temperature which would be from -55°C (ambient) to +125°C (case). The next one is about its operating junction temperature which would be +150°C. The next one is about its storage temperature range which would be from -65°C to +150°C. That are all the main ratings above. And so on. For more information please contact us.