Q2015L9

The Q2015L9 is designed as alternistors which has been specifically designed for applications which are required to switch highly inductive loads. To accomplish this, a special chip has been designed which effectively offers the same performance as two thyristors (SCR's) wired inverse parallel (back to back), hence, the alternistor has been better turn-off behavior than a standard triac.

Q2015L9 has six features. The first one is it it would have high surge current capability. The next one is it would have glass passivated junctions. The next one is 2500 VAC isolation for "L", "J" and "K" package. The next one is it would have high commutating dv/dt. The next one is it would have high static dv/dt. The next one is it would have high temperature construction. That are all the main features.

Some important electrical specifications of Q2015L9 have been concluded into several points as follow. The first one is about its RMS on-state current conduction angle of 360° which would be 15 amps. The next one si about its repetitive peak blocking voltage which would be min 200V. The next one is about its DC gate trigger current in specific operating quadrants Vd = 12Vdc which would be 125mA max. The next one is about its peak off-state current open Vdrm = max rated value which would be max 0.05mA at Tc=25°C and would be 0.5mA at Tc=100°C and would be 2.0mA at Tc=125°C. The next one is about its peak on-state voltage at max rated RMS current Tc=25°C which would be max 1.6V. The next one is about its DC gate trigger voltage Vd=12Vdc which would be min 0.2V at Tc=125°C and would be max 2.5V at Tc=25°C. The next one is about its holding current (DC) gate open which would be max 70mA. The next one is about its peak gate trigger current which would be 2.0A. And so on. For more information please contact us.