Features: ·On-Chip Resonator·+5.0 dBm Output Power·-97 dBc/Hz @ 100KHz Phase Noise·20mA @ -5.0V Bias Supply·100% On-Wafer, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vee1,2,3) -6.0 VDC Supply Voltage (Vtune) +6.0 VDC Sup...
Q1001-BD: Features: ·On-Chip Resonator·+5.0 dBm Output Power·-97 dBc/Hz @ 100KHz Phase Noise·20mA @ -5.0V Bias Supply·100% On-Wafer, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 20...
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Supply Voltage (Vee1,2,3) | -6.0 VDC |
Supply Voltage (Vtune) | +6.0 VDC |
Supply Current (Iee1,2,3) | 30 mA |
Supply Current (Itune) | 1 mA |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Junction temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's Q1001-BD 5.8-6.9 GHz GaAs HBT VCO is a fully integrated oscillator MMIC with on-chip tuning diode and resonator. This design is based on a cross coupled differential pair with on-chip buffer amplifier and output balun. The use of a high-Q resonator structure and integrated varactor diodes results in optimum phase-noise performance. This MMIC uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure low flicker (1/f ) noise and high reliability. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.