Features: • Single Power Supply Operation- 5.0 V ± 10% Read/Program/Erase• High Performance Read- 55/70/90 ns access time• Cost Effective Block Architecture- One 16 Kbytes top or bottom Boot Block with software lockout- Two 8 Kbytes Parameter Blocks- One 96 Kbytes Main Block- One...
Pm29F002: Features: • Single Power Supply Operation- 5.0 V ± 10% Read/Program/Erase• High Performance Read- 55/70/90 ns access time• Cost Effective Block Architecture- One 16 Kbytes top or b...
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Temperature Under Bias |
-65°C to +125°C |
Storage Temperature | -65°C to +125°C |
Input Voltage with Tesperct to Ground on All Pins except A9 pin(2) | -0.5V to +6.25V |
Input Voltage with Respect to Ground on A9 pin(3) | -0.5V to +13.0V |
All Output Voltage with Respect to Ground | -0.5V to VCC +0.6V |
VCC(2) | -0.5V to + 6.25V |
Notes:
1. Stresses under those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. The functional operation of the device or any other conditions under those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condition for extended periods may affected device reliability.
2. Maximum DC voltage on input or I/O pins are +6.25 V. During voltage transitioning period, input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns. Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O pins may undershoot GND to -2.0 V for a period of time up to 20 ns.
3. Maximum DC voltage on A9 pin is +13.0 V. During voltage transitioning period, A9 pin may overshoot to +14.0 V for a period of time up to 20 ns. Minimum DC voltage on A9 pin is -0.5 V. During voltage transitioning period, A9 pin may undershoot GND to -2.0 V for a period of time up to 20 ns.
The Pm29F002 is a 2 Megabit, 5.0 Volt-only Flash Memory organized as 262,144 bytes of 8 bits each. This device is designed to use a 5.0 Volt power supply to perform in-system programming, 12.0 Volt VPP power supply for program and erase operation is not required. The Pm29F002 can be programmed in standard EPROM programmers as well.
The 2 Megabit memory array is divided into five blocks of one 16 Kbytes, two 8 Kbytes, one 96 Kbytes, and one 128 Kbytes for BIOS and parameters storage. The five blocks allow users to flexibly make chip erase or block erase operation flexible. The block erase Pm29F002 feature allows a particular block to be erased and reprogrammed without affecting the data in other blocks. After the Pm29F002 performed chip erase or block erase operation, it can be reprogrammed on a byte-by-byte basis.
The Pm29F002 has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible pin-out and command set. The program operation of Pm29F002 is executed by issuing the program command code into command register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase operation of Pm29F002 is executed by issuing the chip erase or block erase command code into command register. The internal control logic automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before the erase operation. The Pm29F002 also features Data# Polling and Toggle Bit function, the end of program or erase operation can be detected by Data# Polling of I/O7 or Toggle Bit of I/O6.
The Pm29F002 has an optional 16 Kbytes top or bottom boot block with a software lockout feature for data security. The boot block can be used to store user secure code. When the lockout Pm29F002 feature is enabled, the boot block is permanently protected from being reprogrammed.
The Pm29F002 is manufactured on PMC's 0.30 µm advanced nonvolatile technology, P-FLASH™. The device is packaged in a 32-pin DIP and PLCC with access time of 55, 70 and 90 ns.