Position: Home  > All Categories> Integrated Circuits (ICs) > PZTM1102

PZTM1102

Features: · Low output capacitance· Fast switching time· Integrated Schottky protection diode.Application· High-speed switching for industrial applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor VCBO collector-base voltage ope...

product image

PZTM1102 Picture
See larger image
SeekIC No. : 004467555 Detail

PZTM1102: Features: · Low output capacitance· Fast switching time· Integrated Schottky protection diode.Application· High-speed switching for industrial applications.PinoutSpecifications SYMBOL PA...

PZTM1102 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PZTM1102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low output capacitance
· Fast switching time
· Integrated Schottky protection diode.


Application

· High-speed switching for industrial applications.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
VCBO collector-base voltage open emitter - -40 V
VCES collector-emitter voltage VBE = 0 - -40 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC)   - -200 mA
Schottky barrier diode
VR continuous reverse voltage   - 40 V
IF forward current (DC)   - 1 A
IF(AV) average forward current   - 1 A
P power dissipation up to Tamb = 25 ; note 1 - 0.5 W
Tj junction temperature reverse current applied - 125
forward current applied - 150
Combined device
Ptot total power dissipation up to Tamb = 25 ; note 2 - 1.2 W
Tamb operating ambient temperature   -55 +150
Tstg storage temperature   -55 +150
Tj junction temperature   - 150

Notes
1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.





Description

Combination of a PNP transistor PZTM1102 and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Optoelectronics
SFH7770
TLP423J
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Memory Cards, Modules
WT32
VTL5C7
Transformers
TM-09210
BV222-1-00992
Undefined Category
VI-B63-IU
X27 589
View more