Features: PinoutSpecificationsDescription PZTA94 is a High-Voltage PNP Transistor Surface Mount,the Device Marking is PZTA94 = A94. The Symbol of Collector-Emitter Voltage is VCEO ,the value of it is -400,and the unit of it is Vdc.The Symbol of Collector-Base Voltage is VCBO ,the value of it is -4...
PZTA94: Features: PinoutSpecificationsDescription PZTA94 is a High-Voltage PNP Transistor Surface Mount,the Device Marking is PZTA94 = A94. The Symbol of Collector-Emitter Voltage is VCEO ,the value of it i...
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PZTA94 is a High-Voltage PNP Transistor Surface Mount,the Device Marking is PZTA94 = A94.
The Symbol of Collector-Emitter Voltage is VCEO ,the value of it is -400,and the unit of it is Vdc.The Symbol of Collector-Base Voltage is VCBO ,the value of it is -400,and the unit of it is Vdc.The Symbol of Emitter-Base VOltage is VEBO,the value of it is -6.0,and the unit of it is Vdc.The Symbol of Collector Current-Continuous is IC,the value of it is -500,and the unit of it is mAdc.The Symbol of Total Device Dissipation is PD ,the value of it is 2.0,and the unit of it is W.The Symbol of Junction and Storage Temperature is TJ,Tstg,the value of it is -55 to +150,and the unit of it is .
The following is Electrical Characteristics of PZTA94(T A=25 C Unles s Otherwis e noted).When it is Off Characteristics,Collector-Emitter Breakdown Voltage (IC=-1.0mAdc. IB=0)is -400 Vdc and the symbol of it is V(BR)CEO,the minimum of Collector-Base Breakdown Voltage (IC=-100 Adc, IE=0) is -400 Vdc the symbol of it is V(BR)CBO,the minimum of Emitter-Base Breakdown Voltage (IE=-100 Adc, IC=0) is -6.0 Vdc and the symbol of it is V(BR)EBO,the maximum of Collect Cutoff Current (VCB= -400Vdc, IE=0) is -100 nAdc,the maximum of Emitte Cutoff Current (VEB=-6V, IC=0) is -100 nAdc.When it is on Characteristics(T A=25 C Unles s Otherwis e noted) ,the maximum of DC Current Gain is 300,the maximum of Collector-Emitter Saturation Voltage is 0.35Vdc(IC= -1.0 mAdc, IB= -0.1 mAdc),0.5Vdc 0.75Vdc(IC= -10 mAdc, IB= -1.0 mAdc),Base-Emitter Saturation Voltage(IC= -50 mAdc, IB= -5.0 mAdc).The maximum of Base-Emitter Saturation Voltage is 0.75 Vdc.