PZTA29

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 0.1 uA
Package / Case : SOT-223
Emitter- Base Voltage VEBO : 12 V
Maximum DC Collector Current : 0.8 A
Configuration : Single Dual Collector


Features:

• This device designed for applications requiring extremely high current gain at collector currents to 500mA.
• Sourced from process 03.


Specifications

Symbol	Parameter	Value	Units
VCES	Collector-Emitter Voltage	100	V
VCBO	Collector-Base Voltage	100	V
VEBO	Emitter-Base Voltage	12	V
IC	Collector Current - Continuous	800	mA
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations


Parameters:

Technical/Catalog Information	PZTA29
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	800mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 10mA, 10mA
Frequency - Transition	125MHz
Current - Collector Cutoff (Max)	500nA
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PZTA29 PZTA29