PZT2907AT1

Transistors Bipolar (BJT) 600mA 60V PNP

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SeekIC No. : 00214860 Detail

PZT2907AT1: Transistors Bipolar (BJT) 600mA 60V PNP

floor Price/Ceiling Price

Part Number:
PZT2907AT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 0.1 mA at 10 V Configuration : Single Dual Collector
Maximum Operating Frequency : 200 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-223
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Configuration : Single Dual Collector
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 0.1 mA at 10 V
Maximum Operating Frequency : 200 MHz (Min)


Pinout

  Connection Diagram


Description

The PZT2907AT1 is designed for use in linear and switching applications. The features of PZT2907AT1 are: (1)NPN Complement is PZT2222AT1; (2)The SOT-223 package can be soldered using wave or reflow; (3)SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.; (4)Available in 12 mm tape and reel.

The following is about the absolute maximum ratings of PZT2907AT1: (1)Collector-Emitter Voltage: 60 V; (2)Collector-Base Voltage: 60 V; (3)Emitter-Base Voltage: 5.0 V; (4)Collector Current: 600 mA; (5)Total Power Dissipation @ TA = 25°C(1) Derate above 25°C: 1.5W and 12mW/°C; (6)Operating and Storage Temperature Range: 65 to 150 °C.

The electrical characteristics of the PZT2907AT1 are: (1)Collector-Base Breakdown Voltage (IC=10 mA, IE=0): 60V; (2)Collector-Emitter Breakdown Voltage (IC=10 mA, IB=0): 60 V; (3)Emitter-Base Breakdown Voltage (IE=-10 mA, IC=0): 5.0 V; (4)Collector-Base Cutoff Current (VCB=50 V, IE=0):10 nA; (5)Collector-Emitter Cutoff Current (VCE = 30 V, VBE=0.5 Vdc:50 nA; (6)Base-Emitter Cutoff Current (VCE=30 V, VBE=0.5V):50 nA.




Parameters:

Technical/Catalog InformationPZT2907AT1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)600mA
Power - Max1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingDigi-Reel?
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names PZT2907AT1
PZT2907AT1
PZT2907AT1OSDKR ND
PZT2907AT1OSDKRND
PZT2907AT1OSDKR



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