PZFJ108

The features of PZFJ108/PZFJ109/PZFJ110 are high speed switching, interchangeability of drain and source connections, low RDSON at zero gate voltage (<8 for PZFJ108). The PZFJ108/PZFJ109/PZFJ110 are silicon symmetrical n-channel junction FETs in a SOT223 envelope. They are intended for use in applications such as analog switches, choppers and commutators, as well as in audio amplifiers. Pin-1: drain; pin-2: gate; pin-3 sourse; pin-4 gate.(note: drain and source are interchageable.)

The limitation values for PZFJ108/PZFJ109/PZFJ110 are ±VDS(drain-source voltage): 25(max)V; -VGSO(gate-source voltage): 25(max)V; -VDO(gate-source voltage): 25(max)V; IG(forward gate current):50(max)mA; Ptot(total power dissipation): 1.5W(max); Tstg(storage temperature range)=-65(min)/150(max); TJ(operating junction temperature): 150(max).

The static characteristics of  PZFJ108/PZFJ109/PZFJ110 got @ Tj = 25. -IGSS (reverse gate current; @ -VgS = 15V, VDS =0)= 3nA(max); ldsx( drain-source out-off current; @ -VgS = 10V, VDS = 5V)=3nA(max); lDSSS(drain Current; @ Vgs = 0, Vgg = 15V)=80/40/10mA(PZFJ108/PZFJ109/PZFJ110; min); -V(BR)GSS(gate-source breakdown voltage; -IG,= 1uA, VDS=0)=25V(max); -VGS(off)(gate-souroe cut-off voltage; ID = 1uA, VDS = 5V)=3/2/0.5V(min) and 10/6/4V(max)(@ the order of PZFJ108/ PZFJ109/PZFJ110); RDS(on)(drain-source on-resistance, VGS = 0V, VDS =0.1V)=8/12/18(max)(PZFJ108/PZFJ109/PZFJ110).