PZ2327B15U

The PZ2327B15U is designed as NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broadband power amplifier, operating in the 2.3 to 2.7GHz frequency range.

PZ2327B15U has five features. The first one is interdigitated structure giving a high emitter efficiency. The next one is diffused emitter ballasting resistors capable of withstanding a high VSWR and providing excellent current sharing. The next one is gold metallization ensuring excellent stability of the characteristics and giving a prolonged working life. The next one is multicell geometry giving good balance of dissipated power and low thermal resistance. The next one is internal input and output matching cells simplifying circuit design. That are all the main features.

Some absolute maximum ratings of PZ2327B15U have been concluded into several points as follow. The first one is about its collector to base voltage which would be 40V. The next one is about itc collector to emitter voltage, Rbe=0 which would be 30V. The next one is about its collector to emitter voltage open base which would be max 15V. The next one is about its emitter to base voltage, open collector which would be max 3.0V. The next one is about its collector current which would be max 2.1A. The next one is about its total power dissipation at Tmb <= 75°C which would be max 32W. The next one is about its storage temperature range which would be from -65°C to +200°C. The next one is about its operating junction temperature which would be max 200°C. The next one is about its soldering temperature at 0.2mm from the case which would be max 235°C. The next one is about its thermal resistance which would be max 4K/W from juction to mounting base and would be max 0.2K/W from mounting base to heatsink. And so on. For more information please contact us.