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PXB 4330

Features: • ATM layer processing up to STM-4/OC-12 equivalent• Throughput up to 687 Mbit/s, bi-directional• Uni-directional mode with resources of both directions usable (optional)• Up to 8192 connections, individually assignable to queues• Up to 1024 queues per direc...

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SeekIC No. : 004467436 Detail

PXB 4330: Features: • ATM layer processing up to STM-4/OC-12 equivalent• Throughput up to 687 Mbit/s, bi-directional• Uni-directional mode with resources of both directions usable (optional)...

PXB 4330 Data Sheet

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Part Number:
PXB 4330
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• ATM layer processing up to STM-4/OC-12 equivalent
• Throughput up to 687 Mbit/s, bi-directional
• Uni-directional mode with resources of both directions usable (optional)
• Up to 8192 connections, individually assignable to queues
• Up to 1024 queues per direction, individually assignable to schedulers and to service classes
• FIFO queuing within each queue
• Up to 48 schedulers per direction with programmable service rates, individually assignable to PHYs (up to 96 schedulers per direction by cascading two ABM chips,see Application Note [7])
• Up to 16 traffic classes with individually selectable thresholds for service classes
• Up to 24 PHYs


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limit Values
Unit
Ambient temperature under bias PXB TA -40 to 85
Storage temperature Tstg -40 to 125
IC supply voltage with respect to ground VDD -0.3 to 3.6 V
Voltage on any pin with respect to ground VS -0.4 to VDD + 0.4 V
ESD robustness1)
HBM: 1.5 kW, 100 pF		 VESD,HBM 2500 V
1) According to MIL-Std 883D, method 3015.7 and ESD Association Standard EOS/ESD-5.1-1993.The RF Pins 20, 21, 26, 29, 32, 33, 34 and 35 are not protected against voltage stress > 300 V (versus VS or GND). The high frequency performance prohibits the use of adequate protective structures.
Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability


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