Features: · Input and output matching cells allow an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very stable characteristics...
PXB16050U: Features: · Input and output matching cells allow an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated...
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Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter | - | 45 | V |
VCEO | collector-emitter voltage | open base | - | 15 | V |
VCES | collector-emitter voltage | RBE = 0 | - | 45 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | collector current (DC ) | - | 6 | A | |
Ptot | total power dissipation | Tmb = 75 | - | 67 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
NPN silicon planar epitaxial microwave power transistor PXB16050U in a SOT439A metal ceramic flange package with base connected to the flange.