PVGR4S12

Description

MOCVD grown double heterostructure laser diodes PVGR4S12 at 1550nm with peak output powers of 4 W, 8 W, and 40 W are offered as standard products. The wavelength of these devices PVGR4S12 is centered at 1550nm to take advantage of an increase over A1GaAs and InGaAs lasers in the maximum permitted emission levels for eye-safe operation with respect to FDA requirements. Class 1 operation therefore should be possible with relatively high output powers.