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PVD55-12

Features: Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 400V InverterSpecifications Item Symbol Rated Value Unit 3 PhaseRectificationDiode Repetitive Peak Reverse Voltage VRRM 1600 V Non-Repetitive Peak Reverse Vol...

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PVD55-12: Features: Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 400V InverterSpecifications Item Symbol Rated Value Unit 3 PhaseRectificati...

PVD55-12 Data Sheet

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Part Number:
PVD55-12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 400V Inverter


Specifications

Item
Symbol
Rated Value
Unit
3 Phase
Rectification
Diode
Repetitive Peak Reverse Voltage
VRRM
1600
V
Non-Repetitive Peak Reverse Voltage
VRSM
1700
Average Rectified Out Put Current
IO(AV)
25
A
Surge Forward Current
IFSM
350
I Squared t
I2t
612
A2s
Critical Rate of Fall of Forward Current
-di/dt
200(@ :IFM=30A, VR=1000V)
A/µs
Switch
Thyristor
Repetitive Peak Off-State Voltage
VDRM
1600
V
Non-Repetitive Peak Off-State Voltage
VRSM
1700
Average Rectified Out-Put Current
IO(AV)
25
A
Surge Forward Current
ITSM
350
I Squared t
I2t
612
A2s
Critical Rate Of Rise Of Turn-On Current
di/dt
100
A/µs
Peak Gate Power
PGM
5
W
Average Gate Power
PGM(AV)
1
Peak Gate Current
IGM
2
A
Peak Gate Voltage
VGM
10
V
Peak Gate Reverse Voltage
VRGM
5
Inverter
IGBT
Collector-Emitter Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
+/- 20V
Collector Current
DC
IC
25
A
1ms
ICP
50
DC
IF
25
Forward Current
1ms
IFM
50
Collector Power Dissipation
PC
186
W
Brake
IGBT
Collector-Emitter Voltage
VCES
1200
V
Gate Emitter Voltage
VGES
+/- 20V
Collector Current
DC
IC
25
A
1ms
ICP
50
Collector Power Dissipation
PC
186
W
Snubber
Diode
Repetitive Peak Reverse Voltage
VRRM
1200
V
Forward Current, DC
IF
15
A
Surge Forward Current
IFSM
70
Operating Junction Temperature Range
Tjw
-40 to +150°C(notes:+125 °C > Can not be biased.)
Storage Temperature Range
Tstg
-40 to +125°C
Isolation Voltage(Terminal to Base)
Viso
2500(@AC, 1minute), 3000(@AC, 1second)
V
Isolation Resistance(Terminal to Base, @DC=500V)
Riso
500
M.ohm
Mounting Torque(Module Base to Heatsink)
Ftor
(M4), 1.4
N`m



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