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PVB42004X

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime· Multicell ge...

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SeekIC No. : 004467209 Detail

PVB42004X: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Local thick oxide and g...

PVB42004X Data Sheet

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Part Number:
PVB42004X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

· Intended for use in common base class-B power amplifiers up to 4.2 GHz.


Specifications

Connection Diagram


Description

NPN silicon planar epitaxial microwave power transistor PVB42004X in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.


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